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Home > Research area > OFET > organic semiconductor
   
   1) Charge Transport  
 
① Time-of-Flight Measurement of Organic Semiconductors
The physics of intrinsic charge transport in organic materials has been studied by the time-of-flight
(ToF) technique in which the transit time of charge packet in organic films generated by pulsed laser
can be measured under an applied electric field. Transit time can be determined by finding the
intersection point of the asymptotes of the two linear regimes in the double logarithm of photocurrent
versus time plots. In our laboratory, we can use many modified ToF techniques such as charge generation
layer and charge blocking layer ToF.
 
② Monte Carlo Simulation for Charge Transport Physics
Monte Carlo simulation based on disorder formalism has been used to explain charge transport
phenomena of organic materials. In our laboratory we have programmed Monte Carlo simulation (delphi
language). Almost all of our experimental results can be analyzed using this program.
 
   2) Solution Process  
 
Widely used inorganic transistors cannot be applicable to flexible display. However, OFETs can
make possible for that have a lot of advantage that inorganic transistors do not have. Their main
technological attractions is that all the layers of the OFET can be deposited and patterned at low and
room temperature by a combination of low cost solution processing and direct write printing (ink-jet
printing), which makes them ideally suited for realization of low-cost, large-area electronic functions on
flexible substrate. Thus, we are investigating the OFETs manufactured by various solution processes
such as ink-jet printing.
 
[All-solution-processed OFETs by ink-jet printing]